Metal nanoparticle field-effect transistor

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Field-Effect Transistor Built with a Single Crystal Si Nanoparticle

Our program involve the synthesis, assembly, and structural and electrical characterization of single crystal Si nanoparticles. The goal of this work is developing high-speed electrical nanoparticle devices. In this article we review the processes needed to demonstrate a vertical transistor built using PtSi as a Schottky barrier source and drain. A surround-gate of Pt is insulated from body of ...

Organic metal engineering for enhanced field-effect transistor performance.

A key device component in organic field-effect transistors (OFETs) is the organic semiconductor/metal interface since it has to ensure efficient charge injection. Traditionally, inorganic metals have been employed in these devices using conventional lithographic fabrication techniques. Metals with low or high work-functions have been selected depending on the type of semiconductor measured and,...

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch